2019年翻译资格考试初级笔译模拟题：单晶硅
汉译英
摘要：采用红外扫描仪、扫描电镜以及电子束诱生电流仪研究了不同温度和不同冷却速度下原生直拉单晶硅的铜沉淀规律。红外扫描仪观察发现：只有在热处理温度高于800°C的样品中才能观察到铜沉淀团，表明在原生单晶硅中铜沉淀温度为800°C。同时，红外扫描仪和电子束诱生电流谱仪照片显示，快冷(30K/s)时，形成高密度的小铜沉淀团;而慢冷(0.3K/s)导致低密度、巨大的星形铜沉淀团的形成。实验还发现慢冷所形成的星形铜沉淀团对少数载流子具有更强的复合强调。最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
关键词：单晶硅 铜 沉淀
参考译文
Abstract: Scanning infrared microscopy (SIRM), scanning election microscopy (SEM), and electron beam induced current (EBIC) are used to investigate the precipitation behavior of copper in as-grown Czochralski silicon. Copper-precipitate colonies could be observed through SIRM only in the specimens that experienced annealing at temperatures greater than 800°C. These results indicate that the copper precipitation temperature in the as-grown Czochralski silicon is approximately 800°C. In addition, SIRM and EBIC images show that tiny copper-precipitate colonies with high density formed in the specimens under air-cooling (30K/s), while large star-like colonies with how density generated in the specimens under slow cooling (0.3K/s). Furthermore, the recombination ability of the tiny copper-precipitate colonies. Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
Key words: silicon copper precipitation
